Features and Benefits
- Balanced RDS(on) and Qg for class leading efficiency
- Unique Schottky-Plus technology delivers low spiking without compromising efficiency or IDSS leakage.
- High reliability LFPAK packages. Copper clip, solder die attach and qualified to 175°C.
- 425 A continuous current demonstrated.
- 4x SOA capability compared to leading competitors.
Applications
- Low RDS(on) types for power ORing, hotswap and soft start.
- DC to DC solutions for server and telecoms.
- Voltage regulator modules (VRM).
- Point of Load (PoL) modules.
- Secondary side synchronous rectification.
- Brushed and brushless motor control.
Featured products
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MOSFET selection and EMC compliance
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NextPowerS3 MOSFETs
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Products
MOSFETs
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN4R2-30MLD | N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN7R5-30MLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN2R4-30MLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN1R8-30MLH | N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN6R1-25MLD | N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN3R5-25MLD | N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN1R5-25MLH | N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
| PSMN2R0-25MLD | N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMN5R3-25MLD | N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
| PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
| PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | Production | |
| PSMN1R5-40YSD | N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN0R9-25YLD | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R7-40YLD | N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
| PSMN1R7-25YLD | N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN3R2-40YLD | N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN6R0-30YLD | N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN3R5-40YSD | N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN2R0-25YLD | N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN7R5-30YLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMN5R4-25YLD | N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R5-40YLD | N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R9-40YSD | N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R0-25YLD | N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-25YLD | N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R4-30YLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R8-40YSD | N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN2R2-40YSD | N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN4R0-30YLD | N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN3R5-40YSB | N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN1R4-30YLD | N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R2-30YLD | N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R0-40YLD | N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN1R2-25YLD | N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMNR60-25YLH | N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
| PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN6R1-30YLD | N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R7-40YLB | N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN3R2-40YLB | N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN1R9-40YSB | N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R2-40YSB | N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R8-40YSB | N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN2R0-40YLB | N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN2R5-40YLB | N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
| PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMN0R7-25YLD | N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
| PSMN1R0-40YSH | N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production | |
| PSMNR51-25YLH | N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
| PSMN1R4-40YSH | N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
| PSMNR90-40YLH | N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production |
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| vp_1381307205778_zh_CN.zip | 恩智浦的NextPowerS3 MOSFET——带软恢复功能的超快速开关性能 | Value proposition | 2017-03-04 |
| NextPowerS3_cleaner_image.png | NextPowerS3 cleaner image | Marcom graphics | 2020-01-23 |
| AN90011.pdf | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN90016.pdf | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
| AN11261.pdf | RC Thermal Models | Application note | 2021-03-18 |
| vp_1381307205778.zip | NextPowerS3 MOSFETs | Value proposition | 2021-06-11 |
| AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN90003.pdf | LFPAK MOSFET thermal design guide | Application note | 2023-08-22 |
| AN11160.pdf | Designing RC Snubbers | Application note | 2024-10-21 |
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