Key features
- Zero forward and reverse recovery
- Temperature independent switching performance
- Fast and smooth switching performance
- High IFSM capability
- Low leakage current
- Easy to parallel / positive temperature coefficient
- Outstanding figure-of-merit (Qc x VF )
- Thermal stability up to 175 °C junction temperature
- AEC-Q101 qualification
.png)
Key applications
Industrial and consumer applications
- Switch Mode Power Supply (SMPS)
- AC-DC and DC-DC converters
- Battery charging infrastructure
- Server and telecom power supply
- Uninterruptible Power Supply (UPS)
- Photovoltaic inverters
Automotive applications:
- On-Board Chargers (OBC)
- Inverters
- High voltage DC-DC converter
Key benefits
- High power density
- Reduced system cost
- System miniaturization
- High temperature operation
- Reduced EMI
- Increased ruggedness and reliability
Featured products
Featured documents
Latest news and blogs
.jpg)
Latest videos
Parametric search
Silicon Carbide (SiC) Schottky diodes
Please wait loading data... Parametric search is unavailable.
Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSC1065H | 650 V, 10 A SiC Schottky diode in DPAK R2P | Production | |
| PSC1065H-Q | 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications | Production | |
| PSC2065J | 650 V, 20 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC1665L | 650 V, 16 A SiC Schottky diode in TO247 R2P | Production | |
| PSC2065L | 650 V, 20 A SiC Schottky diode in TO247 R2P | Production | |
| PSC0665K | 650 V, 6 A SiC Schottky diode in TO-220-2 R2P | Production | |
| PSC1665J | 650 V, 16 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC1065K | 650 V, 10 A SiC Schottky diode in TO-220-2 R2P | Production | |
| PSC0665H | 650 V, 6 A SiC Schottky diode in DPAK R2P | Production | |
| PSC0665B1 | 650 V, 6 A SiC Schottky diode in bare die | Production | |
| PSC1065B1-Q | 650 V, 10 A SiC Schottky diode in bare die for automotive applications | Production | |
| PSC1065B1 | 650 V, 10 A SiC Schottky diode in bare die | Production |
Visit our documentation center for all documentation
Brochure (1) |
|||
|---|---|---|---|
| File name | Title | Type | Date |
| nexperia_DIODE_Handbook.pdf | Nexperia DIODE Handbook Chinese | Brochure | 2023-09-20 |
Leaflet (3) |
|||
| File name | Title | Type | Date |
| 2024_0001_NEX_158_Factsheet_SiC_Diode_update_August_v1.pdf | New Silicon Carbide Diode portfolio for high-power | Leaflet | 2024-08-26 |
| Nexperia_document_factsheet_SiC_CN.pdf | SiC肖特基二极管 全新高功率碳化硅二极管产品组合 | Leaflet | 2022-04-25 |
| Nexperia_document_SiC-factsheet.pdf | SiC Schottky Diodes - New Silicon Carbide Diode portfolio for high-power | Leaflet | 2021-11-05 |
Marcom graphics (1) |
|||
| File name | Title | Type | Date |
| RS2175_D2PAK_SOT404_B_mk_2-pin.png | D2PAK SOT404_B MARCOM graphic | Marcom graphics | 2021-10-29 |
Selection guide (1) |
|||
| File name | Title | Type | Date |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
Technical note (1) |
|||
| File name | Title | Type | Date |
| TN90007.pdf | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
White paper (2) |
|||
| File name | Title | Type | Date |
| 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese_FINAL_version.pdf | 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese | White paper | 2023-06-08 |
| 2023-0001_NEX_029_Whitepaper_SiC-diodes_V04.pdf | Whitepaper SiC diodes | White paper | 2023-04-21 |
If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, well get back to you shortly.
Or contact us for further support.