Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
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74AUP1T98GS | 74AUP1T98GS,132 | 935292882132 | SOT1202 | Order product |
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Click here for more informationLow-power configurable gate with voltage-level translator
The 74AUP1T98 is a configurable multiple function gate with level translating, Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. Low threshold Schmitt trigger inputs allow these devices to be driven by 1.8 V logic levels in 3.3 V applications.
This device ensures very low static and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Wide supply voltage range from 2.3 V to 3.6 V
CMOS low power dissipation
High noise immunity
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
Low static power consumption; ICC = 1.5 μA (maximum)
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Type number | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
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74AUP1T98GS | 2.3 - 3.6 | CMOS | ± 4 | 3.9 | 70 | 1 | ultra low | -40~125 | XSON6 |
Model Name | Description |
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Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
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74AUP1T98GS | 74AUP1T98GS,132 (935292882132) |
Active | aR |
XSON6 (SOT1202) |
SOT1202 |
REFLOW_BG-BD-1
|
SOT1202_132 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
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74AUP1T98GS | 74AUP1T98GS,132 | 74AUP1T98GS |
File name | Title | Type | Date |
---|---|---|---|
74AUP1T98 | Low-power configurable gate with voltage-level translator | Data sheet | 2023-07-17 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
aup1t98 | aup1t98 IBIS model | IBIS model | 2014-12-21 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1202 | plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1mm x 0.35 mm body | Package information | 2022-06-01 |
SOT1202_132 | XSON6; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
74AUP1T98GS_Nexperia_Product_Reliability | 74AUP1T98GS Nexperia Product Reliability | Quality document | 2024-06-16 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
MAR_SOT1202 | MAR_SOT1202 Topmark | Top marking | 2013-06-03 |
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Model Name | Description |
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Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
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74AUP1T98GS | 74AUP1T98GS,132 | 935292882132 | Active | SOT1202_132 | 5,000 | Order product |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.