Parametric search
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Products
Type number | Description | Status | Quick access |
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GAN080-650EBE | 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Production | |
GAN190-650EBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Production | |
GAN140-650EBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package | Production | |
GAN140-650FBE | 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | Production | |
GAN190-650FBE | 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package | Production |
Application note (2) |
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File name | Title | Type | Date |
AN90041.pdf | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
AN90021.pdf | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
Leaflet (2) |
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File name | Title | Type | Date |
nexperia_document_leaflet_GaNFETs_2024-CHN.pdf | Power GaN FETs Chinese | Leaflet | 2024-07-31 |
nexperia_document_leaflet_GaNFETs_2024.pdf | Power GaN FETs | Leaflet | 2024-07-24 |
Marcom graphics (1) |
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File name | Title | Type | Date |
DFN8080-8_SOT8074-1-combi_mk.png | plastic thermal enhanced small outline package; no leads; 8 terminals; body: 8 x 8 x 0.9 mm | Marcom graphics | 2023-04-20 |
White paper (3) |
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File name | Title | Type | Date |
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese.pdf | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN.pdf | 白皮书: 功率GaN技术: 高效功率转换的需求 | White paper | 2020-08-17 |
nexperia_whitepaper_gan_need_for_efficient_conversion.pdf | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
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