Key features
- Zero forward and reverse recovery
- Temperature independent switching performance
- Fast and smooth switching performance
- High IFSM capability
- Low leakage current
- Easy to parallel / positive temperature coefficient
- Outstanding figure-of-merit (Qc x VF )
- Thermal stability up to 175 °C junction temperature
- AEC-Q101 qualification
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Key applications
Industrial and consumer applications
- Switch Mode Power Supply (SMPS)
- AC-DC and DC-DC converters
- Battery charging infrastructure
- Server and telecom power supply
- Uninterruptible Power Supply (UPS)
- Photovoltaic inverters
Automotive applications:
- On-Board Chargers (OBC)
- Inverters
- High voltage DC-DC converter
Key benefits
- High power density
- Reduced system cost
- System miniaturization
- High temperature operation
- Reduced EMI
- Increased ruggedness and reliability
Featured products
Featured documents
Latest news and blogs
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Parametric search
Silicon Carbide (SiC) Schottky diodes
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Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSC1065H | 650 V, 10 A SiC Schottky diode in DPAK R2P | Production | |
| PSC1065H-Q | 650 V, 10 A SiC Schottky diode in DPAK R2P for automotive applications | Production | |
| PSC2065J | 650 V, 20 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC1665L | 650 V, 16 A SiC Schottky diode in TO247 R2P | Production | |
| PSC2065L | 650 V, 20 A SiC Schottky diode in TO247 R2P | Production | |
| PSC0665K | 650 V, 6 A SiC Schottky diode in TO-220-2 R2P | Production | |
| PSC1665J | 650 V, 16 A SiC Schottky diode in D2PAK R2P | Production | |
| PSC1065K | 650 V, 10 A SiC Schottky diode in TO-220-2 R2P | Production | |
| PSC1065B1-Q | 650 V, 10 A SiC Schottky diode in bare die for automotive applications | Production | |
| PSC0665H | 650 V, 6 A SiC Schottky diode in DPAK R2P | Production | |
| PSC0665B1 | 650 V, 6 A SiC Schottky diode in bare die | Production | |
| PSC1065B1 | 650 V, 10 A SiC Schottky diode in bare die | Production |
Visit our documentation center for all documentation
Brochure (1) |
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|---|---|---|---|
| File name | Title | Type | Date |
| nexperia_DIODE_Handbook.pdf | Nexperia DIODE Handbook Chinese | Brochure | 2023-09-20 |
Leaflet (3) |
|||
| File name | Title | Type | Date |
| 2024_0001_NEX_158_Factsheet_SiC_Diode_update_August_v1.pdf | New Silicon Carbide Diode portfolio for high-power | Leaflet | 2024-08-26 |
| Nexperia_document_factsheet_SiC_CN.pdf | SiC肖特基二极管 全新高功率碳化硅二极管产品组合 | Leaflet | 2022-04-25 |
| Nexperia_document_SiC-factsheet.pdf | SiC Schottky Diodes - New Silicon Carbide Diode portfolio for high-power | Leaflet | 2021-11-05 |
Marcom graphics (1) |
|||
| File name | Title | Type | Date |
| RS2175_D2PAK_SOT404_B_mk_2-pin.png | D2PAK SOT404_B MARCOM graphic | Marcom graphics | 2021-10-29 |
Selection guide (1) |
|||
| File name | Title | Type | Date |
| Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
Technical note (1) |
|||
| File name | Title | Type | Date |
| TN90007.pdf | Evaluation of junction temperature and thermal stacks using the virtual junction | Technical note | 2024-09-02 |
White paper (2) |
|||
| File name | Title | Type | Date |
| 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese_FINAL_version.pdf | 2023-0001_NEX_080_Whitepaper_SiC-diodes_Chinese | White paper | 2023-06-08 |
| 2023-0001_NEX_029_Whitepaper_SiC-diodes_V04.pdf | Whitepaper SiC diodes | White paper | 2023-04-21 |
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