Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
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NGW30T60M3DF | NGW30T60M3DFQ | 934665659127 | SOT429-2 | Order product |
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Click here for more information600 V, 30 A trench field-stop IGBT with full rated silicon diode
The NGW30T60M3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T60M3DF is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 600 V, 30 A IGBT is optimized for high-voltage, low-frequency industrial power inverter and servo motor drive applications.
Collector current (IC) rated at 30 A
Low conduction and switching losses
Stable and tight parameters for easy parallel operation
Maximum junction temperature of 175 °C
Fully rated as a soft fast reverse recovery diode
5 μs short circuit withstand time
RoHS compliant, lead-free plating
Motor drives for industrial and consumer appliances
Power inverters
Uninterruptible Power Supply (UPS) inverter
Photovoltaic (PV) strings
EV charging
Induction heating
Welding
Type number | Product status | VCE [max] (V) | IC [typ] (A) | Switching frequency | tsc [max] (µs) | Tj [min] (°C) | Tj [max] (°C) | Package version | Package name |
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NGW30T60M3DF | Production | 600 | 30 | M3 | 5 | -40 | 175 | SOT429-2 | TO-247-3L |
Model Name | Description |
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Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
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NGW30T60M3DF | NGW30T60M3DFQ (934665659127) |
Active | 30T60M3DF |
TO-247-3L (SOT429-2) |
SOT429-2 | SOT429-2_127 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
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NGW30T60M3DF | NGW30T60M3DFQ | NGW30T60M3DF |
File name | Title | Type | Date |
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NGW30T60M3DF | 600 V, 30 A trench field-stop IGBT with full rated silicon diode | Data sheet | 2023-07-06 |
AN90042 | Nexperia IGBT family product introduction | Application note | 2023-07-03 |
nexperia_igbt_flyer_lr_202304 | 600/650 V IGBTs for industrial applications | Leaflet | 2023-07-03 |
nexperia_igbt_flyer_lr_CHN_202304 | 600/650 V IGBTs 适用于工业应用 | Leaflet | 2023-07-03 |
RS4769_TO-247_PLUS-Combi | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-07-05 |
SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-04-11 |
SOT429-2_TO-247-TL | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Marcom graphics | 2023-11-15 |
SOT429-2 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2022-02-10 |
SOT429-2_127 | TO-247-3L; Tube pack; Standard product orientation | Packing information | 2023-04-03 |
NGW30T60M3DF_L1 | NGW30T60M3DF SPICE model | SPICE model | 2023-07-05 |
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
File name | Title | Type | Date |
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NGW30T60M3DF_L1 | NGW30T60M3DF SPICE model | SPICE model | 2023-07-05 |
Model Name | Description |
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Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
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NGW30T60M3DF | NGW30T60M3DFQ | 934665659127 | Active | SOT429-2_127 | 450 | Order product |
As a Nexperia customer you can order samples via our sales organization or directly via our Online Sample Store: https://extranet.nexperia.com.
Sample orders normally take 2-4 days for delivery.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples.
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.