Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NSF040120T2A1

1200 V, 40 mΩ, N-channel SiC MOSFET

The NSF040120T2A1 is a Silicon Carbide based 1200 V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial applications, such as E-vehicle charging infrastructure, photovoltaic inverters and motor drives.

Features and benefits

  • Excellent RDSon temperature stability

  • Very low switching losses

  • Fast reverse recovery

  • Fast switching speed

  • Temperature independent turn-off switching losses

  • Very fast and robust intrinsic body diode

  • Faster commutation and improved switching due to the additional Kelvin source pin

Applications

  • E-vehicle charging infrastructure

  • Photovoltaic inverters

  • Switch mode power supply

  • Uninterruptable power supply

  • Motor drives

Parametrics

Type number Product status Qualification Drain-source breakdown voltage (V) Drain-source on-state resistance at 15 V (mΩ) Drain-source on-state resistance at 18 V (mΩ) ID [max] (A) Rth(j-c) [typ] (K/W) Package name QG(tot) [typ] (nC) Tj [max] (°C)
NSF040120T2A1 Production Industrial 1200 53 40 55 0.45 X.PAK 81 175

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
NSF040120T2A1 NSF040120T2A1J
(934668904118)		 Active NSF040120T2A1 SOT8107-2
X.PAK
(SOT8107-2) 		SOT8107-2 Not available

Boards

Part number Description Type Quick links Shop link
SiC MOSFET X.PAK evaluation board - NEVB-NSF-XPAK-A
SiC MOSFET X.PAK evaluation board - NEVB-NSF-XPAK-A
Description
The evaluation board NEVB-NSF-XPAK-A consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation. The board is optimized for low inductance and features a high bandwidth current shunt that can be used to evaluate the switching performance with maximum precision.
Type
Evaluation board
Quick links
Shop link

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
NSF040120T2A1 NSF040120T2A1J NSF040120T2A1 rohs rhf
Quality and reliability disclaimer

Documentation (3)

File name Title Type Date
NSF040120T2A1 1200 V, 40 mΩ, N-channel SiC MOSFET Data sheet 2025-03-14
SOT8107-2 Plastic, surface-mounted Top Side Cooling (TSC) Package;1.27 mm pitch; 14.0 mm x 11.8 mm x 3.5 mm body Package information 2025-03-17
UM90031 A guide to using Nexperia SiC MOSFET LTspice models User manual 2025-03-18

Models

No documents available

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online
NSF040120T2A1 NSF040120T2A1J 934668904118 Active Not available 800 Order product

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
NSF040120T2A1 NSF040120T2A1J 934668904118 SOT8107-2 Order product