Features and benefits
- Single N-Channel
- Ultra small silicon (wafer level) package: 1 × 0.6 × 0.2 mm
- Best in class RDS(on) performance (50 mΩ)
- Lowest RDS(on) per mm² in 30 V
- Offerings with and without 2 KV HBM ESD protection
- ID up to 4 A
- Low voltage drive (VGS(th) = 0.8 V typ.)
- VDS = 30V; VGS = 12 V
Applications
- Standard switch for portables/wearables where space is key - hearing aids, earphones, smart watches
- Battery management
- Low-side load switch
- Relay driver
Featured documents
Latest news and blogs
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| AN11304.pdf | MOSFET load switch PCB with thermal measurement | Application note | 2013-01-28 |
| AN90009.pdf | Leakage of small-signal MOSFETs | Application note | 2019-11-08 |
| AN90017.pdf | Load switches for mobile and computing applications | Application note | 2020-09-02 |
| sot8026_3d.png | DSN1006-3; chip-scale package; 3 terminals; body 1 x 0.6 x 0.2 mm | Outline 3d | 2021-07-19 |
| vp_DSN1006_MOSFETs.zip | DSN1006 MOSFETs | Value proposition | 2022-05-26 |
| RS3885_DSN1006-SOT8026_Combi.png | DSN1006 (SOT8026) MARCOM image | Marcom graphics | 2022-06-06 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN.pdf | 适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装 | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobile_2022.pdf | High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| AN90036.pdf | Recommendations for Printed Circuit Board assembly of DSN1006-3 (SOT8026) | Application note | 2022-08-09 |
| SOT8026.pdf | chip-scale package; 3 terminals; body 1.0 x 0.6 x 0.2 mm | Package information | 2023-02-28 |
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