1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
2. Features and benefits
Logic-level compatible
Trench12 MOSFET technology
Efficient switching with soft body-diode recovery
Automotive qualified to AEC-Q101 at 175 °C
- Side-wettable flanks for robust solder joints and automatic optical inspection
3. Applications
12 V, 24 V and 48 V automotive systems
Motors, lamps and solenoid control
Transmission control
LED lighting
Circuit protection
4. Quick reference data
Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
VDS | drain-source voltage | 25 °C ≤ Tj ≤ 175 °C | - | - | 100 | V | |
ID | drain current | VGS = 10 V; Tmb = 25 °C; Figure 2 | - | - | 45 | A | |
Ptot | total power dissipation | Tmb = 25 °C; Figure 1 | - | - | 90.9 | W | |
Static characteristics | |||||||
RDSon | drain-source on-state resistance | VGS = 10 V; ID = 15 A; Tj = 25 °C; Figure 6 | 8.4 | 12 | 15.3 | mΩ | |
Dynamic characteristics | |||||||
QGD | gate-drain charge | ID = 15 A; VDS = 50 V; VGS = 5 V; Tj = 25 °C; Figure 8; Figure 9 | 1.5 | 4.9 | 11 | nC | |
Source-drain diode | |||||||
Qr | recovered charge | IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Tj = 25 °C; Figure 12 | - | 43 | - | nC | |
5. Pinning information
Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
1 | S | source |  |  |
2 | S | source | ||
3 | S | source | ||
4 | G | gate | ||
mb | D | Mounting base; connected to drain |
6. Ordering information
Type number | Package | ||
|---|---|---|---|
Name | Description | Version | |
BUK9M16-100L | LFPAK33 | Plastic, single ended surface mounted package (LFPAK33); 8 leads; 0.65 mm pitch | SOT1210 |
7. Marking
Type number | Marking code |
|---|---|
BUK9M16-100L | 9161HL |
8. Limiting values
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| The drain-source voltage rating is the voltage that a MOSFET can safely sustain between its drain and source in an OFF-state. VDS | drain-source voltage | Tj ≥ 25 °C; Tj ≤ 175 °C | 100 | V | ||
| The gate-source voltage rating of the MOSFET refering to the maximum voltage that can be applied across gate-source. VGS | gate-source voltage | 0 | -20 | 20 | V | |
| The total power dissipation capability given against temperature range between mounting base temperature and the max junction temperature. Ptot | total power dissipation | 90.9 | W | |||
| The drain-source current refers to the maximum continuous current through the MOSFET channel in an ON-state. ID | drain current | VGS < 10 V; 0 | 51 | A | ||
| The pulsed drain current for which max value is given at 10us. IDM | peak drain current | 0; tp ≤ 10 µs; Tmb = 25 °C | 203 | A | ||
| The storage temperature is the temperature range in which the device can be stored without affecting its reliability. Tstg | storage temperature | -55 | 175 | °C | ||
| The junction temperature of the device refers to the capability of the silicon die of the MOSFET. Junction temperature is given as a range of operational temperatures of the MOSFET. Tj | junction temperature | -55 | 175 | °C | ||
| Source-drain diode | ||||||
| The source-drain current is the maximum continous current though the MOSFET body diode (with the MOSFET in OFF-state) IS | source current | Tmb = 25 °C | 45 | A | ||
| The pulse current through the body diode of the MOSFET. ISM | peak source current | 0; tp ≤ 10 µs; Tmb = 25 °C | 203 | A | ||
| Avalanche ruggedness | ||||||
| The single event Avalanche Energy capability of MOSFET at the conditions given. EDS(AL)S | non-repetitive drain-source avalanche energy | ID = 22.3 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; 0; 0; 0; 0 | 60.3 | mJ | ||
| IAS | non-repetitive avalanche current | Vsup = 100 V; VGS = 5 V; Tj(init) = 25 °C; RGS = 50 Ω; 0; 0 | 22.3 | A |
 Figure 1. Normalized total power dissipation as a function of mounting base temperature | ID (A) Tmb (°C) VGS ≥ 10 V (1) 45 A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Figure 2. Continuous drain current as a function of mounting base temperature |
| ID (A) VDS (V) Tmb = 25 °C; IDM is a single pulse Figure 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage | |
| IAL (A) tAL (ms) (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche Figure 4. Avalanche rating; avalanche current as a function of avalanche time | |
9. Thermal characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| The thermal resistance between the silicon junction and the MOSFET mounting base. Mounting base is sometimes referred to as case in other datasheets. Rth(j-mb) | thermal resistance from junction to mounting base | 1.5 | 1.65 | K/W |
| Zth(j-mb)(K/W) tp (s) Figure 1. Transient thermal impedance from junction to mounting base as a function of pulse duration |
10. Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Static characteristics | ||||||
| The minimum voltage the device is guaranteed to block between the drain and source terminals in the OFF-state. V(BR)DSS | drain-source breakdown voltage | ID = 250 µA; VGS = 0 V; | 118 | V | ||
| The gate-source threshold voltage needed for MOSFETs to conduct a certain drain-current at a specific junction temperature. It is temperature dependent and at higher temperatures the threshold value is lower. VGS(th) | gate-source threshold voltage | ID = 0.12 mA; 0; | 1.62 | V | ||
| The drain-source leakage current when the MOSFET is in OFF-state. It is temperature dependent and gets higher at higher temperatures. IDSS | drain leakage current | VGS = 0 V; | 0.08 | µA | ||
| The gate-source leakage current normally in nA range. It is temperature dependent and gets higher at higher temperatures. IGSS | gate leakage current | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 2 | 100 | nA | |
| The resistance of the device in the on-state under the conditions described. Drain-source on resistance varies greatly with both junction temperature and the gate-source voltage (VGS). RDSon | drain-source on-state resistance | 10.5 | mΩ | |||
| RG | gate resistance | f = 1 MHz; Tj = 25 °C | 0.75 | 1.5 | 3 | Ω |
| Dynamic characteristics | ||||||
| The total gate charge of the MOSFET. Covering the full switching transition showing turn-on threshold, linear mode, and fully enhanced stages. QG(tot) | total gate charge | Tj = 25 °C | 22.2 | nC | ||
| The gate-source charge parameter is a part of the switching transition. It is normally used to determine turn-on time. QGS | gate-source charge | VGS = 5 V; Tj = 25 °C | 7.26 | nC | ||
| The gate-drain charge is a part of the switching transition. It is responsible for how long the switching transition is held at plateu region. QGD | gate-drain charge | VGS = 5 V; Tj = 25 °C | 6.99 | nC | ||
| VGS(pl) | gate-source plateau voltage | ID = 15 A; VDS = 50 V; Tj = 25 °C | 2.9 | V | ||
| The capacitance between the gate and the other two terminals (source and drain). The parameter is voltage dependent. Ciss | input capacitance | VGS = 0 V; f = 1 MHz; Tj = 25 °C | 2845 | pF | ||
| The capacitance between the drain and the other two terminals (gate and source). The parameter is voltage dependent. Coss | output capacitance | VGS = 0 V; f = 1 MHz; Tj = 25 °C | 692 | pF | ||
| The capacitance between the drain and the gate. The parameter is voltage dependent. Crss | reverse transfer capacitance | VGS = 0 V; f = 1 MHz; Tj = 25 °C | 48.7 | pF | ||
| td(on) | turn-on delay time | VDS = 50 V; RL = 3.2 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C | 12.7 | ns | ||
| tr | rise time | VDS = 50 V; RL = 3.2 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C | 13.1 | ns | ||
| td(off) | turn-off delay time | VDS = 50 V; RL = 3.2 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C | 27.1 | ns | ||
| tf | fall time | VDS = 50 V; RL = 3.2 Ω; VGS = 5 V; RG(ext) = 5 Ω; Tj = 25 °C | 28.4 | ns | ||
| Source-drain diode | ||||||
| The forward voltage of the MOSFET body diode under the conditions described. VSD | source-drain voltage | VGS = 0 V; | 0.89 | V | ||
| The time taken to recover the charge from the anti-parallel diode when it is switched from its conducting state to its reverse biased (diode) state. Reverse recovery time is related to switching performance. trr | reverse recovery time | IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 50 V; Tj = 25 °C | 50 | ns | ||
| The total amount of charge recovered from the anti-parallel diode when it is switched from its conducting state to its reverse biased (diode) state. Reverse recovery charge is related to switching performance. Qr | recovered charge | VGS = 0 V; VDS = 50 V; Tj = 25 °C | 1.93 | nC |
| ID (A) VDS (V) Tj = 25 °C Figure 1. Output characteristics; drain current as a function of drain-source voltage; typical values | Rdson (mΩ) VGS (V) Tj = 25 °C; ID = 25 A Figure 2. Drain-source on-state resistance as a function of gate-source voltage; typical values |
| ID (A) VGS (V) VDS = V Figure 3. Transfer characteristics; drain current as a function of gate-source voltage; typical values | ID (A) VGS (V) Tj = 25 °C; VDS = 5 V Figure 4. Sub-threshold drain current as a function of gate-source voltage |
| VGS(th) (V) Tj (°C) ID = 0.12 mA ; VDS = VGS Figure 5. Gate-source threshold voltage as a function of junction temperature | Rdson (mΩ) ID (A) Tj = 25 °C Figure 6. Drain-source on-state resistance as a function of drain current; typical values |
| a Tmb (°C) Figure 7. Normalized drain-source on-state resistance factor as a function of junction temperature | VGS (V) QG (nC) Tj = 25 °C; ID = 25 A Figure 8. Gate-source voltage as a function of gate charge; typical values |
 Figure 9. Gate charge waveform definitions | C (pF) VDS (V) VGS = 0 V; f = 1 MHz Figure 10. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
| IS (A) VSD (V) VGS = 0 V Figure 11. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values |  Figure 12. Reverse recovery timing definition |
11. Package outline
 Figure 1. Package outline LFPAK33 (SOT1210) |
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