Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NX-HB-GAN111UL half-bridge evaluation board

The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck
or boost converter. This enables the basic study of the switching characteristics and
efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for
synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single
logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.

NX-HB-GAN111UL half-bridge evaluation board

Key features & benefits

The GAN111-650WSB is a 650 V, 97 mΩ( typical) Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and a low-voltage silicon MOSFET in a cascode configuration. It is assembled in a die on die stack for optimised performance and minimized internal parasitics, housed in a 3-pin TO-247 package

Key features of GAN111-650WSB include: 
• Simple gate drive (0 V to +10 V or +12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability

Key applications

Hard and soft switching converters for industrial and datacom power
• AC/DC Bridgeless totem-pole PFC
• DC/DC High-frequency resonant converters
• Datacom and telecom (AC/DC and DC/DC) converters
• Solar (PV) inverters
• Servo motor drives
• TV PSU and LED drivers

Products on the board (5)

Type number Description Status Quick access
GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW-Q100 2-input EXCLUSIVE-OR gate Production
74LVC1G17GW Single Schmitt trigger buffer Production
BAT54C Schottky barrier diode Production
PNU65010EP 650 V, 1 A ultrafast recovery rectifier Production

Related boards (4)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board
4 kW analogue bridgeless totem-pole PFC evaluation board 4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board 4 kW analogue bridgeless totem-pole PFC evaluation board Evaluation board

Products on the board (5)

Type number Description Status Quick access
GAN111-650WSB 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW-Q100 2-input EXCLUSIVE-OR gate Production
74LVC1G17GW Single Schmitt trigger buffer Production
BAT54C Schottky barrier diode Production
PNU65010EP 650 V, 1 A ultrafast recovery rectifier Production

Related boards (4)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) NX-HB-GAN041UL-GAN041-650WSB-half-bridge-evaluation-board Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW) Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board
4 kW analogue bridgeless totem-pole PFC evaluation board 4-kW-analogue-bridgeless-totem-pole-PFC-evaluation-board 4 kW analogue bridgeless totem-pole PFC evaluation board Evaluation board

Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90045 NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide User manual 2024-09-06

Support

If you are in need of design/technical support, let us know and fill in the answer form, we'll get back to you shortly.