Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
---|---|---|---|---|
74CBTLV3126PW | 74CBTLV3126PW,118 | 935289344118 | SOT402-1 | Order product |
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Click here for more information4-bit bus switch
The 74CBTLV3126 provides a 4-bit high-speed bus switch with separate output enable inputs (1OE to 4OE). The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The switch is disabled (high-impedance OFF-state) when the output enable (nOE) input is LOW.
To ensure the high-impedance OFF-state during power-up or power-down, nOE should be tied to the GND through a pull-down resistor. The minimum value of the resistor is determined by the current-sinking capability of the driver.
Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 2.3 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.
Supply voltage range from 2.3 V to 3.6 V
Standard '126'-type pinout
High noise immunity
Complies with JEDEC standard:
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V)
5 Ω switch connection between two ports
Rail to rail switching on data I/O ports
CMOS low power consumption
Latch-up performance exceeds 250 mA per JESD78B Class I level A
IOFF circuitry provides partial Power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Type number | VCC (V) | VPASS (V) | Logic switching levels | RON (Ω) | f(-3dB) (MHz) | Nr of bits | tpd (ns) | Power dissipation considerations | Tamb (°C) | Package name |
---|---|---|---|---|---|---|---|---|---|---|
74CBTLV3126PW | 2.3 - 3.6 | 3.3 | CMOS/LVTTL | 7 | 400 | 4 | 0.2 | very low | -40~125 | TSSOP14 |
Model Name | Description |
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|
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
74CBTLV3126PW | 74CBTLV3126PW,118 (935289344118) |
Active | TLV3126 |
TSSOP14 (SOT402-1) |
SOT402-1 |
SSOP-TSSOP-VSO-WAVE
|
SOT402-1_118 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
74CBTLV3126PW | 74CBTLV3126PW,118 | 74CBTLV3126PW |
File name | Title | Type | Date |
---|---|---|---|
74CBTLV3126 | 4-bit bus switch | Data sheet | 2024-04-11 |
SOT402-1 | 3D model for products with SOT402-1 package | Design support | 2023-02-02 |
cbtlv3126 | 74CBTLV3126 IBIS model | IBIS model | 2015-02-23 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP14_SOT402-1_mk | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
SOT402-1 | plastic, thin shrink small outline package; 14 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.2 mm body | Package information | 2023-11-07 |
SOT402-1_118 | TSSOP14; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2020-04-21 |
74CBTLV3126PW_Nexperia_Product_Reliability | 74CBTLV3126PW Nexperia Product Reliability | Quality document | 2024-06-16 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
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Model Name | Description |
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|
Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
---|---|---|---|---|---|---|
74CBTLV3126PW | 74CBTLV3126PW,118 | 935289344118 | Active | SOT402-1_118 | 2,500 | Order product |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.