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BAS116T

Single low leakage current switching diode

Single low leakage current switching diode, encapsulated in an ultra small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

This product has been discontinued

Features and benefits

  • High switching speed: trr = 0.8 µs
  • Low leakage current: 3 pA
  • Repetitive peak reverse voltage: VRRM ≤ 85 V
  • AEC-Q101 qualified
  • Low capacitance: Cd = 2 pF
  • Reverse voltage: VR ≤ 75 V
  • Ultra small SMD plastic package

Applications

  • Low leakage current applications
  • General-purpose switching
  • Voltage clamping
  • Reverse polarity protection

Parametrics

Type number Package version Package name Size (mm)
BAS116T SOT416 SC-75 1.6 x 0.75 x 0.9

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BAS116T BAS116T,115
(934063959115)		 Obsolete SOT416
SC-75
(SOT416) 		SOT416 SOT416_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BAS116T BAS116T,115 BAS116T rohs rhf rhf
Quality and reliability disclaimer

Documentation (4)

File name Title Type Date
BAS116T Single low leakage current switching diode Data sheet 2012-07-10
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT416 plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body Package information 2020-04-21
BAS116T BAS116T SPICE model SPICE model 2024-10-14

Support

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Models

File name Title Type Date
BAS116T BAS116T SPICE model SPICE model 2024-10-14

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet