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Click here for more informationBSH207
P-channel vertical D-MOS logic level FET
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Saves PCB space due to small footprint
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for logic level gate drive sources
- Suitable for very low gate drive sources voltage
Applications
- battery powered applications
- High-speed digital interfaces
Parametrics
| Type number | Product status | Release date |
|---|---|---|
| BSH207 | End of life | 2011-01-24 |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| BSH207 | BSH207,135 (934055227135) |
Obsolete | no package information | ||||
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| BSH207 | BSH207,135 | BSH207 |
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Documentation (9)
| File name | Title | Type | Date |
|---|---|---|---|
| AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
| AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
BSH207
P-channel vertical D-MOS logic level FET
Buy from Nexperia
| SKU | Stock* | MOQ | Price per unit | Quantity |
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Buy from distributors
| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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| Seller | SKU | Stock | MOQ | 1 | 10 | 100 | 1,000 | 10,000 | Purchase |
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** Displayed price per unit is based on small quantity orders
*** Authorized resellers for overstock, mature, and discontinued products which are warranted for reliability by the reseller, no longer by Nexperia>
