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Click here for more informationBSN254
N-channel vertical D-MOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features and benefits
- Low conduction losses due to low on-state resistance
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for use with all 5 V logic families
Applications
- Line current interruptors in telephone sets
- Relay, high-speed and line transformer drivers
Parametrics
Type number | Package version | Package name | Product status | Release date |
---|---|---|---|---|
BSN254 | SOT54 | TO-92 | End of life | 2010-08-03 |
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
BSN254 | BSN254,126 (934004930126) |
Obsolete | no package information |
Environmental information
All type numbers in the table below are discontinued.
Quality and reliability disclaimerDocumentation (7)
File name | Title | Type | Date |
---|---|---|---|
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
BSN254 | BSN254 SPICE model | SPICE model | 2012-06-08 |
BSN254A | BSN254A SPICE model | SPICE model | 2012-06-08 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.