Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK138-50DL

Logic level TOPFET D-PAK version of BUK117-50DL

Monolithic temperature and overload protected logic level power MOSFET in TOPFET2technology assembled in a 3 pin surface mount plastic package.

This product has been discontinued

Features and benefits

  • TrenchMOS output stage
  • Current limiting
  • Overload protection
  • Overtemperature protection
  • Protection latched reset by input
  • 5 V logic compatible input level
  • Control of output stage and supply of overload protection circuits derived from input
  • Low operating input current permits direct drive by micro-controller
  • ESD protection on all pins
  • Overvoltage clamping for turn off of inductive loads

Applications

General purpose switch for driving

  • lamps
  • motors
  • solenoids
  • heaters

in automotive systems and other applications.

Parametrics

Type number Package version Package name Product status Release date
BUK138-50DL SOT428 DPAK End of life 2011-01-18

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK138-50DL BUK138-50DL,118
(934056344118)
Obsolete BUK138 50DL Batch No. P**XXYY AZ SOT428
DPAK
(SOT428)
SOT428 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT428_118
BUK138-50DL/C,118
(934060719118)
Obsolete BUK138 50DL Batch No. P**XXYY AZ SOT428_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK138-50DL BUK138-50DL,118 BUK138-50DL rohs rhf
BUK138-50DL BUK138-50DL/C,118 BUK138-50DL rohs rhf
Quality and reliability disclaimer

Documentation (18)

File name Title Type Date
BUK138-50DL Logic level TOPFET D-PAK version of BUK117-50DL Data sheet 2001-04-30
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT428 3D model for products with SOT428 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DPAK_SOT428_mk plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Marcom graphics 2017-01-28
SOT428 plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
SOT428 3D model for products with SOT428 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.