Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK714R1-40BT

N-channel TrenchPLUS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. The devices include TrenchPLUS diodes for temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

This product has been discontinued

Features and benefits

  • AEC-Q101 compliant
  • Allows responsive temperature monitoring due to integrated temperature sensor
  • Low conduction losses due to low on-state resistance
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V loads
  • Electrical Power Assisted Steering (EPAS)
  • General purpose power switching
  • Motors, lamps and solenoids

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Automotive qualified Release date
BUK714R1-40BT SOT426 D2PAK End of life N 1 40 4.1 75 29 272 Y 2010-10-14

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK714R1-40BT BUK714R1-40BT,118
(934058847118)		 Obsolete BUK714R1 40BT P**XXYY AZ Batch no. no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK714R1-40BT BUK714R1-40BT,118 BUK714R1-40BT rohs rhf
Quality and reliability disclaimer

Documentation (12)

File name Title Type Date
BUK714R1-40BT N-channel TrenchPLUS standard level FET Data sheet 2009-02-10
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet