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Click here for more informationCBTD3384DK
10-bit level shifting bus switch with 5-bit output enables
The CBTD3384 is a dual 5-pole, single-throw bus switch. The device features two output enable inputs (nOE) that each control five switch channels. The switches are disabled when the associated nOE input is HIGH. CBTD3384 is specifically designed for 5 V to 3.3 V level shifting applications. This device is fully specified for partial power down applications using IOFF.
Features and benefits
Designed to be used in 5 V to 3.3 V level shifting applications with internal diode
5 Ω switch connection between two ports
Direct interface with TTL levels
IOFF circuitry provides partial Power-down mode operation
Latch-up protection exceeds 100 mA per JESD78
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C
Parametrics
Type number | Package name |
---|---|
CBTD3384DK | SSOP24 |
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
CBTD3384DK | CBTD3384DK,118 (935270732118) |
Obsolete | CBTD3384DK Standard Procedure Standard Procedure | no package information |
Environmental information
All type numbers in the table below are discontinued.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
CBTD3384DK | CBTD3384DK,118 | CBTD3384DK |
Series
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
cbtd3384 | cbtd3384 IBIS model | IBIS model | 2013-04-08 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.