Orderable parts
Type number | Orderable part number | Ordering code (12NC) | Package | Buy from distributors |
---|---|---|---|---|
GANE1R8-100QBA | GANE1R8-100QBAZ | 934667635332 | SOT8091-1 | Order product |
Discover Nexperia’s extensive portfolio of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs, IGBTs, and analog & logic ICs. Our components power virtually every electronic design worldwide - from automotive and industrial to mobile and consumer applications.
Our products find applications across various industries, from automotive and industrial to power, computing, consumer, mobile, and wearables. With a commitment to innovation and sustainability, our components set benchmarks in efficiency, empowering our global customer base to develop energy-efficient and cutting-edge solutions.
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Click here for more information100 V, 1.8 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANE1R8-100QBA is a a general purpose 100 V, 1.8 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
Type number | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
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GANE1R8-100QBA | SOT8091-1 | VQFN7 | Development | 1 | 100 | 1.8 | 150 | 4.5 | 65 | 1.1 | 2500 | 1100 | 2024-09-17 |
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
GANE1R8-100QBA | GANE1R8-100QBAZ (934667635332) |
Development | 1R8DQBA |
VQFN7 (SOT8091-1) |
SOT8091-1 | SOT8091-1_332 |
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
GANE1R8-100QBA | GANE1R8-100QBAZ | GANE1R8-100QBA |
File name | Title | Type | Date |
---|---|---|---|
SOT8091-1 | very thin quad flatpack; no leads | Package information | 2024-05-29 |
SOT8091-1_332 | VQFN7; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-03-28 |
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Type number | Orderable part number | Ordering code (12NC) | Status | Packing | Packing Quantity | Buy online |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.