Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NGW75T65H3DF

IGBT with trench construction, fast recovery diode

The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠-⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard⁠-⁠switching 650 V, 75 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications.

Features

  • Device current is rated at 75 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • HV-H3TRB qualified

Applications

  • Power inverters such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Power Factor Correction (PFC)

  • Induction heating

  • Welding

Parametrics

Type number Product status VCE [max] (V) IC [typ] (A) Configuration Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW75T65H3DF Production 650 75 HS -40 175 SOT429-2 TO-247-3L

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
NGW75T65H3DF NGW75T65H3DFQ
(934665504127)		 Active W75T65H3DF SOT429-2
TO-247-3L
(SOT429-2) 		SOT429-2 SOT429-2_127

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
NGW75T65H3DF NGW75T65H3DFQ NGW75T65H3DF rohs rhf
Quality and reliability disclaimer

Documentation (7)

File name Title Type Date
NGW75T65H3DF 650 V, 75 A trench field-stop IGBT with full rated silicon diode Data sheet 2025-02-28
AN90042 Nexperia 650 V (G3) IGBT product introduction Application note 2025-03-06
SOT429-2 SOT429-2.step Design support 2024-11-22
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03
NGW75T65H3DF_L1 NGW75T65H3DF SPICE model SPICE model 2024-12-06

Support

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Longevity

The Nexperia Longevity Program is aimed to provide our customers information from time to time about the expected time that our products can be ordered. The NLP is reviewed and updated regularly by our Executive Management Team. View our longevity program here.


Models

File name Title Type Date
SOT429-2 SOT429-2.step Design support 2024-11-22
NGW75T65H3DF_L1 NGW75T65H3DF SPICE model SPICE model 2024-12-06

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online
NGW75T65H3DF NGW75T65H3DFQ 934665504127 Active SOT429-2_127 450 Order product

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
NGW75T65H3DF NGW75T65H3DFQ 934665504127 SOT429-2 Order product