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Click here for more informationPBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.
PNP complement: PBS3540E.
Alternatives
Features and benefits
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- AEC-Q101 qualified
Applications
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Charging circuits
- Low power switches (e.g. motors, fans)
Parametrics
| Type number | Package version | Package name | Size (mm) | channel type (e) | Ptot (mW) | VCEO [max] (V) | IC [max] (mA) | hFE [min] | fT [min] (MHz) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|
| PBSS2540E | SOT416 | SC-75 | 1.6 x 0.75 x 0.9 | NPN | 150.0 | 40.0 | 500.0 | 200.0 | 250.0 | N |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PBSS2540E | PBSS2540E,115 (934059169115) |
Obsolete |
SC-75 (SOT416) |
SOT416 | SOT416_115 |
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PBSS2540E | PBSS2540E,115 | PBSS2540E |
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Documentation (5)
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS2540E | 40 V, 500 mA NPN low VCEsat (BISS) transistor | Data sheet | 2009-11-23 |
| AN11076 | Thermal behavior of small-signal discretes on multilayer PCBs | Application note | 2021-06-23 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT416 | plastic, surface-mounted package; 3 leads; 1 mm pitch; 1.6 mm x 0.75 mm x 0.9 mm body | Package information | 2020-04-21 |
| PBSS2540E | PBSS2540E SPICE model | SPICE model | 2024-08-27 |
Support
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Models
| File name | Title | Type | Date |
|---|---|---|---|
| PBSS2540E | PBSS2540E SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PBSS2540E
40 V, 500 mA NPN low VCEsat (BISS) transistor
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