Bipolar transistors

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ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PHKD6N02LT

Dual N-channel TrenchMOS logic level FET

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Suitable for logic level gate drive sources

Applications

  • Battery chargers
  • DC-to-DC convertors
  • Notebook computers
  • Portable equipment

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 5 V (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) Ptot [max] (W) Qr [typ] (nC) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PHKD6N02LT SOT96-1 SO8 End of life N 2 20 20 35 150 10.9 6 4.17 7 N 950 355 2011-01-05

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PHKD6N02LT PHKD6N02LT,118
(934056831118)		 Obsolete PHKD6N2 SOT96-1
SO8
(SOT96-1) 		SOT96-1 SO-SOJ-REFLOW
SO-SOJ-WAVE
WAVE_BG-BD-1
SOT96-1_118
PHKD6N02LT,518
(934056831518)		 Obsolete PHKD6N2 SOT96-1_518

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PHKD6N02LT PHKD6N02LT,118 PHKD6N02LT rhf
PHKD6N02LT PHKD6N02LT,518 PHKD6N02LT rohs rhf rhf
Quality and reliability disclaimer

Documentation (17)

File name Title Type Date
PHKD6N02LT Dual N-channel TrenchMOS logic level FET Data sheet 2017-06-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SO8_SOT96-1_mk plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Marcom graphics 2017-01-28
SOT96-1 plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Package information 2020-04-21
SO-SOJ-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet