Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PHN210

Dual N-channel TrenchMOS intermediate level FET

Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources
  • Suitable for low gate drive sources

Applications

  • DC-to-DC convertors
  • Logic level translators
  • Motor and relay drivers

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors Automotive qualified Release date
PHN210 SOT96-1 SO8 End of life N 2 N 2010-10-13

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PHN210 PHN210,118
(934033430118)		 Obsolete PHN210 Diffusion Batch Number n**** THAILAND SOT96-1
SO8
(SOT96-1) 		SOT96-1 SO-SOJ-REFLOW
SO-SOJ-WAVE
WAVE_BG-BD-1
SOT96-1_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PHN210 PHN210,118 PHN210 rohs rhf rhf
Quality and reliability disclaimer

Documentation (14)

File name Title Type Date
PHN210 Dual N-channel enhancement mode TrenchMOS (tm) transistor Data sheet 2001-12-31
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SO8_SOT96-1_mk plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Marcom graphics 2017-01-28
SOT96-1 plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Package information 2020-04-21
SO-SOJ-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
PHN210 PHN210 SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PHN210 PHN210 SPICE model SPICE model 2012-06-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet