Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PMGD370XN

Dual N-channel TrechMOS extremely low level FET

Dual extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Alternatives

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Saves PCB space due to small footprint (40 % smaller than SOT23)
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for low gate drive sources

Applications

  • Driver circuits
  • Switching in portable appliances

Parametrics

Type number Package version Package name Product status Release date
PMGD370XN SOT363 TSSOP6 End of life 2011-01-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMGD370XN PMGD370XN,115
(934057728115)		 Obsolete D3% empty empty SOT363
TSSOP6
(SOT363) 		SOT363 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT363_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMGD370XN PMGD370XN,115 PMGD370XN rohs rhf rhf
Quality and reliability disclaimer

Documentation (20)

File name Title Type Date
PMGD370XN Dual N-channel uTrenchmos (tm) extremely low level FET Data sheet 2004-02-26
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN90032 Low temperature soldering, application study Application note 2022-02-22
Nexperia_document_guide_MiniLogic_PicoGate_201901 PicoGate leaded logic portfolio guide Brochure 2019-01-07
SOT363 3D model for products with SOT363 package Design support 2018-12-05
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
TSSOP6_SOT363_mk plastic, surface-mounted package; 6 leads; 1.3 mm pitch; 2 mm x 1.25 mm x 0.95 mm body Marcom graphics 2017-01-28
SOT363 plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body Package information 2022-06-01
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMGD370XN_10_08_2011 PMGD370XN_10_08_2011 Spice parameter SPICE model 2011-09-13
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
MAR_SOT363 MAR_SOT363 Topmark Top marking 2013-06-03
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PMGD370XN_10_08_2011 PMGD370XN_10_08_2011 Spice parameter SPICE model 2011-09-13
SOT363 3D model for products with SOT363 package Design support 2018-12-05

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet