Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPMZB420UN
30 V, single N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Alternatives
Features and benefits
- Fast switching
- Trench MOSFET technology
- Low threshold voltage
- Ultra thin package profile with 0.37 mm height
Applications
- Relay driver
- High-speed line driver
- Low-side load switch
- Switching circuits
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMZB420UN | SOT883B | DFN1006B-3 | End of life | N | 1 | 30 | 8 | 490 | 590 | 150 | 0.9 | 0.16 | 0.75 | 0.36 | 0.7 | N | 43 | 7.7 | 2012-05-11 |
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
PMZB420UN | PMZB420UN,315 (934065869315) |
Obsolete |
DFN1006B-3 (SOT883B) |
SOT883B |
REFLOW_BG-BD-1
|
SOT883B_315 |
Environmental information
All type numbers in the table below are discontinued.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
PMZB420UN | PMZB420UN,315 | PMZB420UN |
Documentation (16)
File name | Title | Type | Date |
---|---|---|---|
PMZB420UN | 30 V, single N-channel Trench MOSFET | Data sheet | 2012-05-11 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN1006B-3_SOT883B_mk | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
SOT883B | plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body | Package information | 2022-05-20 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PMZB420UN_24_02_2012 | PMZB420UN.24_02_2012 Spice parameter | SPICE model | 2012-04-16 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
File name | Title | Type | Date |
---|---|---|---|
PMZB420UN_24_02_2012 | PMZB420UN.24_02_2012 Spice parameter | SPICE model | 2012-04-16 |
SOT883B | 3D model for products with SOT883B package | Design support | 2020-01-22 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.