Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PSMN027-100BS

N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.

Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Suitable for standard level gate drive

Applications

  • DC-to-DC converters
  • Load switching
  • Motor control
  • Server power supplies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN027-100BS SOT404 D2PAK End of life N 1 100 26.8 175 37 9 30 103 91 3 N 1624 115 2011-10-25

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN027-100BS PSMN027-100BS,118
(934066211118)		 Obsolete PSMN027 100BS SOT404
D2PAK
(SOT404) 		SOT404 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT404_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN027-100BS PSMN027-100BS,118 PSMN027-100BS rohs rhf
Quality and reliability disclaimer

Documentation (20)

File name Title Type Date
PSMN027-100BS N-channel 100V 26.8 mOhm standard level MOSFET in D2PAK. Data sheet 2017-04-20
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT404 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
D2PAK_SOT404_mk plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Marcom graphics 2017-01-28
SOT404 plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2022-05-27
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN027-100BS PSMN027-100BS SPICE model SPICE model 2021-05-27
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN027-100BS PSMN027-100BS Thermal model Thermal model 2012-03-15
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN027-100BS PSMN027-100BS SPICE model SPICE model 2021-05-27
PSMN027-100BS PSMN027-100BS Thermal model Thermal model 2012-03-15
SOT404 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet