Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PSMN7R8-120ES

N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Improved dynamic avalanche performance
  • Suitable for standard level gate drive
  • I2PAK package for slimline adaptors & height constrained applications

Applications

  • AC-to-DC power supply
  • Synchronous rectification
  • Motor control
  • Slimline adaptors & chargers

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN7R8-120ES SOT226 I2PAK End of life N 1 120 7.9 175 70 50.5 167 349 264 3 N 9473 441 2013-01-07

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN7R8-120ES PSMN7R8-120ESQ
(934067449127)		 Obsolete PSMN7R8 120ES SOT226
I2PAK
(SOT226) 		SOT226 Not available

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN7R8-120ES PSMN7R8-120ESQ PSMN7R8-120ES rohs rhf
Quality and reliability disclaimer

Documentation (15)

File name Title Type Date
PSMN7R8-120ES N-channel 120 V, 7.8 mΩ standard level MOSFET in I2PAK Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
PSMN7R8-120ES PSMN7R8-120ES Spice model SPICE model 2013-01-15
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN7R8-120ES PSMN7R8-120ES Thermal model Thermal model 2013-01-15

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN7R8-120ES PSMN7R8-120ES Spice model SPICE model 2013-01-15
PSMN7R8-120ES PSMN7R8-120ES Thermal model Thermal model 2013-01-15
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet