Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PSMN8R5-100ES

N-channel 100 V 8.5 mΩ standard level MOSFET in I2PAK

Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Robust construction for demanding applications
  • Standard level gate

Applications

  • AC-to-DC power supply equipment
  • Motor control
  • Server power supplies
  • Synchronous rectification

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN8R5-100ES SOT226 I2PAK End of life N 1 100 8.5 175 33 111 263 124 3 N 5512 380 2012-10-11

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN8R5-100ES PSMN8R5-100ESQ
(934067378127)		 Obsolete PSMN8R5 100ES SOT226
I2PAK
(SOT226) 		SOT226 Not available

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN8R5-100ES PSMN8R5-100ESQ PSMN8R5-100ES rohs rhf
Quality and reliability disclaimer

Documentation (15)

File name Title Type Date
PSMN8R5-100ES N-channel 100 V, 8.5 mΩ standard level MOSFET in I2PAK Data sheet 2018-04-02
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
PSMN8R5-100ES PSMN8R5-100ES Spice model SPICE model 2012-10-30
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN8R5-100ES PSMN8R5-100ES Thermal model Thermal model 2012-10-30

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN8R5-100ES PSMN8R5-100ES Spice model SPICE model 2012-10-30
PSMN8R5-100ES PSMN8R5-100ES Thermal model Thermal model 2012-10-30
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet