Bipolar transistors

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ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PTVS5V0Z1USKN

Transient voltage suppressor in DSN1608-2 for mobile applications

Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2 (SOD963) package, designed for transient overvoltage protection.

This product has been discontinued

Features and benefits

  • Rated peak pulse current: IPPM = 80 A (8/20 µs pulse)
  • Rated peak pulse power: PPPM = 1200 W (8/20 µs pulse)
  • Dynamic resistance Rdyn = 0.06 Ω
  • Reverse current: IRM = 0.025 µA
  • Very low package height: 0.25 mm

Applications

  • Power supply protection
  • Industrial application
  • Power management

Parametrics

Type number Package name
PTVS5V0Z1USKN DSN1608-2

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PTVS5V0Z1USKN PTVS5V0Z1USKNYL
(934069207315)
Obsolete no package information

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PTVS5V0Z1USKN PTVS5V0Z1USKNYL PTVS5V0Z1USKN rohs rhf rhf
Quality and reliability disclaimer

Documentation (2)

File name Title Type Date
PTVS5V0Z1USKN Transient voltage suppressor in DSN1608-2 for mobile applications Data sheet 2017-05-04
PTVS5V0Z1USKN PTVS5V0Z1USKN SPICE Model SPICE model 2015-12-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PTVS5V0Z1USKN PTVS5V0Z1USKN SPICE Model SPICE model 2015-12-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.