NX-HB-GAN111UL half-bridge evaluation board
The NX-HB-GAN111UL half-bridge evaluation board provides the elements of a simple buck
or boost converter. This enables the basic study of the switching characteristics and
efficiency achievable with Nexperia’s 650V Cascode GaN FETs. The circuit is configured for
synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single
logic input or separate high / low level inputs. The voltage input and output can operate at up to 400 VDC, with a power output > 2000 Watts.
NX-HB-GAN111UL half-bridge evaluation board
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Key features & benefits
The GAN111-650WSB is a 650 V, 97 mΩ( typical) Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and a low-voltage silicon MOSFET in a cascode configuration. It is assembled in a die on die stack for optimised performance and minimized internal parasitics, housed in a 3-pin TO-247 package
Key features of GAN111-650WSB include:
• Simple gate drive (0 V to +10 V or +12 V)
• Robust gate oxide (±20 V capability)
• High gate threshold voltage (+4 V) for very good gate bounce immunity
• Very low source-drain voltage in reverse conduction mode
• Transient over-voltage capability
Key applications
Hard and soft switching converters for industrial and datacom power
• AC/DC Bridgeless totem-pole PFC
• DC/DC High-frequency resonant converters
• Datacom and telecom (AC/DC and DC/DC) converters
• Solar (PV) inverters
• Servo motor drives
• TV PSU and LED drivers
Products on the board (5)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Production | |
|
74HCT1G86GW-Q100 | 2-input EXCLUSIVE-OR gate | Production | |
|
|
74LVC1G17GW | Single Schmitt trigger buffer | Production | |
|
BAT54C | Schottky barrier diode | Production | |
|
PNU65010EP | 650 V, 1 A ultrafast recovery rectifier | Production |
Products on the board (5)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
GAN111-650WSB | 650 V, 97 mOhm Gallium Nitride (GaN) FET in a TO-247 package | Production | |
|
|
74HCT1G86GW-Q100 | 2-input EXCLUSIVE-OR gate | Production | |
|
|
74LVC1G17GW | Single Schmitt trigger buffer | Production | |
|
|
BAT54C | Schottky barrier diode | Production | |
|
|
PNU65010EP | 650 V, 1 A ultrafast recovery rectifier | Production |
Documentation (2)
| File name | Title | Type | Date |
|---|---|---|---|
| GaNFET_evaluation_board_Terms_Of_Use | GaN FET EVALUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
| UM90045 | NX-HB-GAN111UL 2.0 kW half-bridge evaluation board user guide | User manual | 2024-09-06 |
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