Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK7E4R3-75C

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

This product has been discontinued

Features and benefits

  • AEC Q101 compliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V, 24 V and 42 V loads
  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7E4R3-75C SOT226 I2PAK End of life N 1 75 4.3 175 192 67 142 333 155 3 Y 8744 923 2011-02-17

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
BUK7E4R3-75C BUK7E4R3-75C,127
(934060123127)		 Obsolete BUK7E4R3 75C P**XXYY AZ SOT226
I2PAK
(SOT226) 		SOT226 Not available

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
BUK7E4R3-75C BUK7E4R3-75C,127 BUK7E4R3-75C rohs rhf
Quality and reliability disclaimer

Series

Documentation (17)

File name Title Type Date
BUK7E4R3-75C N-channel TrenchMOS standard level FET Data sheet 2011-04-19
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT226 3D model for products with SOT226 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
BUK7E4R3-75C_RC_Thermal_Model BUK7E4R3-75C Thermal design model Thermal design 2021-01-18
BUK7E4R3-75C BUK7E4R3-75C Thermal model Thermal model 2010-09-24

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
BUK7E4R3-75C_RC_Thermal_Model BUK7E4R3-75C Thermal design model Thermal design 2021-01-18
BUK7E4R3-75C BUK7E4R3-75C Thermal model Thermal model 2010-09-24
SOT226 3D model for products with SOT226 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet