Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

BUK7Y08-40B

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

This product has been discontinued

Features and benefits

  • AEC-Q101 compliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V loads
  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
BUK7Y08-40B SOT669 LFPAK56; Power-SO8 End of life N 1 40 8 175 75 14.7 36.3 105 69.2 3 Y 1530 414 2011-01-27

Series

Documentation (17)

File name Title Type Date
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

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Models

File name Title Type Date
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet