Bipolar transistors

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Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NGW40T65M3DFP

650 V, 40 A trench field-stop IGBT with full rated silicon diode

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications.

Features and benefits

  • Collector current (IC) rated at 40 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature of 175 °C

  • Fully rated as a soft fast reverse recovery diode

  • 5 μs short circuit withstand time

  • RoHS compliant, lead-free plating

Applications

  • Motor drives for industrail and consumer appliances

    • Serve motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufactuing, etc.

  • Power inverters

    • Uninterruptible Power Supply (UPS) inverter

    • Photovoltaic (PV) strings

    • EV charging

  • Induction heating

  • Welding

Parametrics

Type number Product status VCE [max] (V) IC [typ] (A) Configuration tsc [max] (µs) Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW40T65M3DFP Production 650 40 MS 5 -40 175 SOT429-2 TO-247-3L

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
NGW40T65M3DFP NGW40T65M3DFPQ
(934668245127)		 Active 40T65M3DFP SOT429-2
TO-247-3L
(SOT429-2) 		SOT429-2 SOT429-2_127

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
NGW40T65M3DFP NGW40T65M3DFPQ NGW40T65M3DFP rohs rhf
Quality and reliability disclaimer

Documentation (5)

File name Title Type Date
NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Data sheet 2024-06-28
SOT429-2 SOT429-2.step Design support 2024-11-22
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
SOT429-2 SOT429-2.step Design support 2024-11-22

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online
NGW40T65M3DFP NGW40T65M3DFPQ 934668245127 Active SOT429-2_127 450 Order product

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
NGW40T65M3DFP NGW40T65M3DFPQ 934668245127 SOT429-2 Order product