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Click here for more informationPDTD123YK
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm
500 mA NPN Resistor-Equipped Transistors (RET) family.
Features and benefits
- Built-in bias resistors
- Simplifies circuit design
- 500 mA output current capability
- Reduces component count
- Reduces pick and place costs
- ±10 % resistor ratio tolerance
- AEC-Q101 qualified
Applications
- Digital application in automotive and industrial segment
- Controlling IC inputs
- Cost saving alternative for BC817 series in digital applications
- Switching loads
Parametrics
| Type number | Package version | Package name | Size (mm) |
|---|---|---|---|
| PDTD123YK | SOT346 | SMT3; MPAK | 2.9 x 1.5 x 1.15 |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PDTD123YK | PDTD123YK,115 (934058972115) |
Obsolete | no package information | ||||
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PDTD123YK | PDTD123YK,115 | PDTD123YK |
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Documentation (3)
| File name | Title | Type | Date |
|---|---|---|---|
| PDTD123Y_SER | NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm | Data sheet | 2009-11-26 |
| LSYMTRA | Letter Symbols - Transistors; General | Other type | 1999-05-06 |
| PDTD123YK | PDTD123YK SPICE model | SPICE model | 2024-08-27 |
Support
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Models
| File name | Title | Type | Date |
|---|---|---|---|
| PDTD123YK | PDTD123YK SPICE model | SPICE model | 2024-08-27 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.