Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PHK04P02T

P-channel vertical D-MOS logic level FET

Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources
  • Suitable for very low gate drive sources voltage

Applications

  • Battery powered applications
  • High-speed digital interfaces

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PHK04P02T SOT96-1 SO8 End of life P 1 -16 120 150 150 -4.66 1.83 7.2 5 69 -0.6 N 528 200 2011-01-05

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PHK04P02T PHK04P02T,118
(934057290118)		 Obsolete K04P02T SOT96-1
SO8
(SOT96-1) 		SOT96-1 SO-SOJ-REFLOW
SO-SOJ-WAVE
WAVE_BG-BD-1
SOT96-1_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PHK04P02T PHK04P02T,118 PHK04P02T rohs rhf rhf
Quality and reliability disclaimer

Documentation (17)

File name Title Type Date
PHK04P02T P-channel vertical D-MOS logic level FET Data sheet 2010-12-15
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SO8_SOT96-1_mk plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Marcom graphics 2017-01-28
SOT96-1 plastic, small outline package; 8 leads; 1.27 mm pitch; 4.9 mm x 3.9 mm x 1.75 mm body Package information 2020-04-21
SO-SOJ-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
SO-SOJ-WAVE Footprint for wave soldering Wave soldering 2009-10-08
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

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Models

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet