Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PSMN4R4-80PS

N-channel 80 V, 4.1 mΩ standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Low conduction losses due to low on-state resistance

  • Suitable for standard level gate drive sources

Applications

  • DC - DC converters

  • Load switch

  • Motor control

  • Server power supplies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN4R4-80PS SOT78 TO-220AB End of life N 1 80 4.1 175 100 25 125 306 130 3 N 8400 700 2010-09-02

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN4R4-80PS PSMN4R4-80PS,127
(934063914127)		 Discontinued / End-of-life PSMN4R4 80PS SOT78
TO-220AB
(SOT78) 		SOT78 SOT78_127

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN4R4-80PS PSMN4R4-80PS,127 PSMN4R4-80PS rohs rhf
Quality and reliability disclaimer

Documentation (20)

File name Title Type Date
PSMN4R4-80PS N-channel 80 V, 4.1 mOhm standard level FET Data sheet 2017-05-08
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
SOT78 3D model for products with SOT78 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT78 plastic, single-ended package (heatsink mounted, 1 mounting hole); 3 leads; 2.54 mm pitch; 15.6 mm x 10 mm x 4.4 mm body Package information 2020-04-21
Reliability_information_template_t6_sot78 Reliability Information T6 SOT78 Quality document 2023-03-24
T6_SOT78_PSMN4R4-80PS_Nexperia_Quality_document PSMN4R4-80PS Quality document Quality document 2023-03-23
PSMN4R4_80PS PSMN4R4-80PS SPICE model SPICE model 2010-03-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN4R4-80PS PSMN4R4-80PS Thermal model Thermal model 2009-06-16

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN4R4_80PS PSMN4R4-80PS SPICE model SPICE model 2010-03-12
PSMN4R4-80PS PSMN4R4-80PS Thermal model Thermal model 2009-06-16
SOT78 3D model for products with SOT78 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet