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Click here for more informationBUK9620-55A
N-channel TrenchMOS logic level FET
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
Applications
12 V and 24 V loads
Automotive and general purpose power switching
Motors, lamps and solenoids
Parametrics
Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 5 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BUK9620-55A | SOT404 | D2PAK | Production | N | 1 | 55 | 18 | 20 | 21 | 175 | 54 | 118 | 81 | 1.5 | Y | 1660 | 290 | 2010-09-02 |
Series
Documentation (19)
File name | Title | Type | Date |
---|---|---|---|
BUK9620-55A | N-channel TrenchMOS logic level FET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11156 | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN11160 | Designing RC Snubbers | Application note | 2024-10-21 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
D2PAK_SOT404_mk | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Marcom graphics | 2017-01-28 |
SOT404 | plastic, single-ended surface-mounted package (D2PAK); 3 terminals (one lead cropped); 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body | Package information | 2022-05-27 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
BUK9620-55A | BUK9620-55A Spice model | SPICE model | 2014-03-04 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
File name | Title | Type | Date |
---|---|---|---|
BUK9620-55A | BUK9620-55A Spice model | SPICE model | 2014-03-04 |
SOT404 | 3D model for products with SOT226 package | Design support | 2017-06-30 |
Ordering, pricing & availability
Sample
As a Nexperia customer you can order samples via our sales organization.
If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.