Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

NGW30T65M3DFP

The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time of 5 μs. This hard-switching 650 V, 30 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications and servo motor drive applications.

Features

  • Device current is rated at 30 A

  • Low conduction and switching losses

  • Stable and tight parameters for easy parallel operation

  • Maximum junction temperature 175 °C

  • Fully rated and fast reverse recovery diode

  • 5 μs short circuit withstand time

  • HV-H3TRB qualified

Applications

  • Motor drives for industrial and consumer appliances

    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.

  • Power inverters, such as

    • Uninterruptible Power Supply (UPS) inverter

    • EV charging converter

  • Induction heating

  • Welding

Parametrics

Type number Product status VCE [max] (V) IC [typ] (A) Configuration tsc [max] (µs) Tj [min] (°C) Tj [max] (°C) Package version Package name
NGW30T65M3DFP Qualification 650 30 MS 5 -40 175 SOT429-2 TO-247-3L

Package

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
NGW30T65M3DFP NGW30T65M3DFPQ
(934668335127)		 Active W30T65M3DFP SOT429-2
TO-247-3L
(SOT429-2) 		SOT429-2 SOT429-2_127

Environmental information

Type number Orderable part number Chemical content RoHS RHF-indicator
NGW30T65M3DFP NGW30T65M3DFPQ NGW30T65M3DFP rohs rhf
Quality and reliability disclaimer

Documentation (4)

File name Title Type Date
NGW30T65M3DFP 650 V, 30 A trench field-stop IGBT with full rated silicon diode Data sheet 2025-01-17
SOT429-2_TO-247-TL Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Marcom graphics 2023-11-15
SOT429-2 Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L Package information 2022-02-10
SOT429-2_127 TO-247-3L; Tube pack; Standard product orientation Packing information 2023-04-03

Support

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Models

No documents available

Ordering, pricing & availability

Type number Orderable part number Ordering code (12NC) Status Packing Packing Quantity Buy online
NGW30T65M3DFP NGW30T65M3DFPQ 934668335127 Active SOT429-2_127 450 Order product

Sample

As a Nexperia customer you can order samples via our sales organization.

If you do not have a direct account with Nexperia our network of global and regional distributors is available and equipped to support you with Nexperia samples. Check out the list of official distributors.

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet

Orderable parts

Type number Orderable part number Ordering code (12NC) Package Buy from distributors
NGW30T65M3DFP NGW30T65M3DFPQ 934668335127 SOT429-2 Order product