Half-bridge ASFETs for space constrained applications feature:
- 60% lower parasitic inductance due to internal clip connection
- 30% space saving on PCB compared to LFPAK56D dual
- Flexible leads for BLR
- Industry leading low Rth(j-mb) of LFPAK ensures MOSFET junction temperature can be kept under control even in the most compact of designs
- As with all motor applications, there is a level of system vibration that cannot be dampened. LFPAK56D-HB brings a unique level of board level reliability and ruggedness.
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Products
Type number | Description | Status | Quick access |
---|---|---|---|
PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production |
Application note (1) |
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---|---|---|---|
File name | Title | Type | Date |
AN90011.pdf | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
Selection guide (1) |
|||
File name | Title | Type | Date |
Nexperia_Selection_guide_2023.pdf | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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