Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PSMN130-200D

N-channel TrenchMOS SiliconMAX standard level FET

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

This product has been discontinued

Features and benefits

  • Higher operating power due to low thermal resistance

  • Low conduction losses due to low on-state resistance

  • Suitable for high frequency applications due to fast switching characteristics

Applications

  • DC-to-DC converters

  • Switched-mode power supplies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN130-200D SOT428 DPAK End of life N 1 200 130 175 20 22 65 150 740 3 N 2470 207 2010-12-21

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN130-200D PSMN130-200D,118
(934055761118)		 Obsolete PSMN130 200D SOT428
DPAK
(SOT428) 		SOT428 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT428_118

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN130-200D PSMN130-200D,118 PSMN130-200D rohs rhf
Quality and reliability disclaimer

Documentation (19)

File name Title Type Date
PSMN130-200D N-channel TrenchMOS SiliconMAX standard level FET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT428 3D model for products with SOT428 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DPAK_SOT428_mk plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Marcom graphics 2017-01-28
SOT428 plastic, single-ended surface-mounted package (DPAK); 3 leads; 2.285 mm pitch; 6 mm x 6.6 mm x 2.3 mm body Package information 2022-05-20
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN130_200D PSMN130_200D SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN130_200D PSMN130_200D SPICE model SPICE model 2012-06-08
SOT428 3D model for products with SOT428 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet