Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPMCM650VNE
12 V, N-channel Trench MOSFET
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Features and benefits
- Low threshold voltage
- Ultra small package: 0.98 × 1.48 × 0.35 mm
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
Parametrics
| Type number | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | RDSon [max] @ VGS = 2.5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 4.5 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMCM650VNE | OL-PMCM650VNE | WLCSP6 | End of life | N | 1 | 12 | 8 | 25 | 32 | 150 | 8.4 | 3.6 | 15.4 | 0.556 | 0.6 | N | 1060 | 330 | 2015-04-07 |
Package
All type numbers in the table below are discontinued.
| Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
|---|---|---|---|---|---|---|---|
| PMCM650VNE | PMCM650VNEZ (934068627023) |
Obsolete | no package information | ||||
| PMCM650VNEF (934068627135) |
Obsolete | ||||||
Environmental information
All type numbers in the table below are discontinued.
| Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
|---|---|---|---|---|
| PMCM650VNE | PMCM650VNEZ | PMCM650VNE |
|
|
| PMCM650VNE | PMCM650VNEF | PMCM650VNE |
|
|
Documentation (8)
| File name | Title | Type | Date |
|---|---|---|---|
| PMCM650VNE | 12 V, N-channel Trench MOSFET | Data sheet | 2017-05-19 |
| AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
| AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
| AN11261 | RC Thermal Models | Application note | 2021-03-18 |
| AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
| nexperia_document_leaflet_WLCSP_201803 | Small-signal MOSFETs in WLCSP - Smallest size - lowest RDS(on) | Leaflet | 2018-04-25 |
| nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
| TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2024-08-09 |
Support
If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.
Models
No documents available
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.