Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PMPB12R5UPE

20 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

This product has been discontinued

Features and benefits

  • Low threshold voltage

  • Trench MOSFET technology

  • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

  • Exposed drain pad for excellent thermal conduction

  • ElectroStatic Discharge (ESD) protection > 2000 V HBM (class H2)

Applications

  • Charging switch for portable devices

  • DC-to-DC converters

  • Power management in battery-driven portable devices

  • Hard disk and computing power management

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) VESD (kV) (kV) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMPB12R5UPE SOT1220-2 DFN2020M-6 Production P 1 -20 10 14.4 21 2000 150 -13 8.2 26 1.9 -0.6 N 2000 291 2022-02-24

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMPB12R5UPE PMPB12R5UPEX
(934662976115)		 Discontinued / End-of-life ZS SOT1220-2
DFN2020M-6
(SOT1220-2) 		SOT1220-2 SOT1220-2_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMPB12R5UPE PMPB12R5UPEX PMPB12R5UPE rohs rhf rhf
Quality and reliability disclaimer

Series

Documentation (6)

File name Title Type Date
PMPB12R5UPE 20 V, P-channel Trench MOSFET Data sheet 2022-02-24
AN90023 Thermal performance of DFN packages Application note 2020-11-23
SOT1220-2 3D model for products with SOT1220-2 package Design support 2023-02-02
nexperia_document_leaflet_SsMOS_for_mobile_2022-CHN 适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobile_2022 High volume small-signal MOSFETs for mobile and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
SOT1220-2 plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm Package information 2020-06-17

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
SOT1220-2 3D model for products with SOT1220-2 package Design support 2023-02-02

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet