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NCR320U
LED driver consisting of a resistor-equipped NPN transistor with two diodes on one chip in an SOT457...
Price $ 0.33
NCR320UX
250 mA LED driver in SOT457
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PNS40010ER
High power density, standard switching time recovery rectifier with high-efficiency planar technolog...
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PNS40010ER
400 V, 1 A high power density, standard switching time recovery rectifier
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Bipolar transistors
Back to topMJD45H11
80 V, 8 A PNP high power bipolar transistorPNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11
$ 0.69 *
Features and benefits
Features and benefits
High thermal power dissipation capability
High energy efficiency due to less heat generation
Electrically similar to popular MJD45H series
Low collector emitter saturation voltage
Fast switching speeds
Price
- $ 0.69
MJD45H11J
80 V, 8 A PNP high power bipolar transistor
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MJD32C
100 V, 3 A PNP high power bipolar transistorMJD32CJ
100 V, 3 A PNP high power bipolar transistor
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MJD44H11A
80 V, 8 A NPN high power bipolar transistorMJD44H11AJ
80 V, 8 A NPN high power bipolar transistor
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MJD31CA
100 V, 3 A NPN high power bipolar transistorMJD31CAJ
100 V, 3 A NPN high power bipolar transistor
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NCR420Z
150 mA LED driver in SOT223NCR420ZX
150 mA LED driver in SOT223
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NCR421Z
150 mA LED driver in SOT223NCR421ZX
150 mA LED driver in SOT223
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NCR421PAS
150 mA LED driver in DFN2020D-6NCR421PASX
150 mA LED driver in DFN2020D-6
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NCR321PAS
250 mA LED driver in DFN2020D-6NCR321PASX
250 mA LED driver in DFN2020D-6
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Diodes
Back to topPMEG060T050ELPE
60 V, 5 A low leakage current Trench Schottky...PMEG060T050ELPEZ
60 V, 5 A low leakage current Trench Schottky barrier rectifier
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PMEG050T150EIPD
50 V, 15 A low VF Trench Schottky barrier...PMEG050T150EIPDAZ
50 V, 15 A low VF Trench MEGA Schottky barrier rectifier
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PNE20030EP
200 V, 3 A hyperfast recovery rectifierPNE20030EPX
200 V, 3 A hyperfast recovery rectifier
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PNE20010ER
200 V, 1 A hyperfast recovery rectifierPNE20010ERX
200 V, 1 A hyperfast recovery rectifier
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BAS16TH
High-speed switching diodeBAS16THR
High-speed switching diode
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BAS21TH
High-voltage switching diodeBAS21THR
High-voltage switching diode
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ESD protection, TVS, filtering and signal conditioning
Back to topPESD2CANFD24V-T
ESD protection for In-vehicle networksESD protection device in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other transients.
$ 0.30 *
Features and benefits
- Reverse stand-off voltage: VRWM = 24 V
- Low clamping voltage: VCL= 33 V at IPP = 1 A
- High temperature capability: Tj = 175 °C
- AEC-Q101 qualified
Price
- $ 0.30
PESD2CANFD24V-TR
ESD protection for In-vehicle networks
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PESD2V8R1BSF
Ultra low capacitance bidirectional ESD...PESD2V8R1BSFYL
Ultra low capacitance bidirectional ESD protection diode
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PESD2ETH1G-T
Extremely low clamping low capacitance...PESD2ETH1G-TR
ESD protection for In-vehicle networks
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PUSB3BB2DF
Extremely low clamping low capacitance ESD protectionPUSB3BB2DFZ
Extremely low clamping low capacitance ESD protection
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PESD3V3T1BL
Bidirectional ESD protection diodePESD3V3T1BLYL
Bidirectional ESD protection diode
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MOSFETs
Back to topBUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. Fully designed and qualified to meet beyond AEC-Q101 requirements.
$ 2.81 *
Features and benefits
- Fully automotive qualified to beyond AEC-Q101
- -55 °C to +175 °C suitable for thermally demanding environments
- LFPAK copper clip technology & Gull Wing leads
- Unique 40 V Trench 9 superjunction technology
Price
- $ 2.81
BUK7S0R7-40HJ
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
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BUK9K13-60RA
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET...BUK9K13-60RAX
Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology
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BUK7S0R7-40H
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88BUK7S0R7-40HJ
N-channel 40 V, 0.7 mΩ standard level MOSFET in LFPAK88
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PSMNR51-25YLH
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET...PSMNR51-25YLHX
N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology
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BUK7V4R2-40H
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET...BUK7V4R2-40HX
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
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PSMNR70-30YLH
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in...PSMNR70-30YLHX
N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology
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PMH260UNE
20 V, N-channel Trench MOSFETPMH260UNEH
20 V, N-channel Trench MOSFET
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BUK6D22-30E
30 V, N-channel Trench MOSFETBUK6D22-30EX
30 V, N-channel Trench MOSFET
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GaN FETs
Back to topGAN063-650WSA
650 V, 50 mΩ Gallium Nitride (GaN) FETThe GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
$ 14.66 *
Features and benefits
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- Very good gate bounce immunity
Price
- $ 14.66
GAN063-650WSAQ
650 V, 50 mΩ Gallium Nitride (GaN) FET
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GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a...
GAN041-650WSBQ
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
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Analog & Logic ICs
Back to top74AVC8T245BQ
8-bit dual supply translating transceiver with configurable voltage translation; 3-stateThe 74AVC8T245 is an 8-bit, dual supply transceiver that enables bidirectional level translation. It features two 8-bit input-output ports (An and Bn), a direction control input (DIR), a output enable input (OE) and dual supply pins (VCC(A) and VCC(B)).
$ 1.07 *
Features and benefits
- Wide supply voltage range
- Complies with JEDEC standards
- ESD protection
- Multiple package options
- Specified from -40°C to +85°C and -40°C to +125°C
Price
- $ 1.07
74AVC8T245BQ,118
8-bit dual supply translating transceiver with configurable voltage translation; 3-state
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LSF0102DC
2-bit bidirectional multi-voltage level translator...LSF0102DCH
2-bit bidirectional multi-voltage level translator; open-drain; push-pull
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NXS0104PW-Q100
Dual supply translating transceiver...NXS0104PW-Q100J
Dual supply translating transceiver; open drain; auto direction sensing
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NXB0104BQ
Dual supply translating transceiver...NXB0104BQX
Dual supply translating transceiver; auto direction sensing; 3-state
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74LV1T08GW
2-input single supply translating AND gate74LV1T08GWH
2-input single supply translating AND gate
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74AUP1G17GX4
Low-power Schmitt trigger74AUP1G17GX4Z
Low-power Schmitt trigger
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74LVC1G14GX4
Single Schmitt-trigger inverter74LVC1G14GX4Z
Single Schmitt-trigger inverter
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74HC4053PW
Triple 2-channel analog multiplexer/ demultiplexer74HC4053PW,118
Triple 2-channel analog multiplexer/demultiplexer
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