Bipolar transistors

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ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

Half-Bridge evaluation board featuring 35 mΩ GaN FETs in a TO-247 package (3.5 kW)

The NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board provides the elements of a simple buck or boost converter. This enables the switching characteristics and efficiency achievable with Nexperia’s 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high side & low side logic inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.

NX-HB-GAN041UL GAN041-650WSB half-bridge evaluation board

Key features & benefits

The Gallium Nitride (GaN) FET GAN041-650WSB (35 mΩ RDS(on) typ.) used in this evaluation board is a normally-off device, comprised of a high-voltage depletion-mode GaN HEMT (High Electron Mobility Transistor) combined with a tailored 30 V Si-FET in a cascode configuration.It is assembled as a die-on-die stack for best performance and minimized internal parasitics, housed in a 3-pin TO-247 package. 

Key features of GAN041-650WSB include: 

  • Very low switching losses 
  • Rugged gate with high threshold voltage, Vth = 4 V, enables single supply gate drive voltage 0 V to 10 - 12 V. 
  • Very good QGD/QGS << 1 ratio, protects against parasitic turn-on 
  • Minimal reverse-recovery 
  • Best in class third-quadrant off-state conduction performance for wide-bandgap devices 

Key applications

Products on the board (2)

Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

Related boards (5)

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Products on the board (2)

Type number Description Status Quick access
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
74HCT1G86GW 2-input EXCLUSIVE-OR gate Production

Related boards (5)

Board Description Type Quick links Shop link
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-HB-GAN039-TSCUL-top-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package NX-DP-GAN039-TSC-Double-pulse-evaluation-board Double pulse evaluation board featuring 33 mΩ GaN FETs in a top-side cooled CCPAK1212i package Evaluation board
3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package NX-HB-GAN039-BSCUL-bottom-side-cooled-half-bridge-evaluation-board 3.5 kW half-bridge evaluation board featuring 33 mΩ GaN FETs in a bottom-side cooled CCPAK1212 package Evaluation board
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Documentation (2)

File name Title Type Date
GaNFET_evaluation_board_Terms_Of_Use GaN FET EVALUATION BOARD TERMS OF USE Other type 2023-10-10
UM90010 NX-HB-GAN041UL 3.5 kW Half-Bridge evaluation board using GAN041-650WSB User manual 2024-09-30

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