SiC MOSFET X.PAK evaluation board - NEVB-NSF-XPAK-A
The evaluation board NEVB-NSF-XPAK-A consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation. The board is optimized for low inductance and features a high bandwidth current shunt that can be used to evaluate the switching performance with maximum precision.
Key features & benefits:
The evaluation board circuit consists of two half-bridges that enables the basic study of the dynamic characteristics of X.PAK devices in single and parallel operation.
The SiC MOSFET´s used are 30mOhm X.PAK (NSF030120T2A0) with leading RDSon stability up to 175°C, optimized in all areas to achieve highest efficiency and figure of merit.
Key features of NEVB-NSF-XPAK-A include:
- 4 DUTs in XPAK assembled
- Enhanced PCB design to minimize loop inductance
- Testing Single or Paralleled Devices
Key applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- Uninterruptable power supply
- Motor drives
Products on the board (3)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
NSF030120T2A0 | 1200 V, 30 mΩ, N-channel SiC MOSFET | Production | |
|
|
NSF040120T2A1 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Production | |
|
|
NSF060120T2A0 | 1200 V, 60 mΩ, N-channel SiC MOSFET | Production |
Products on the board (3)
| Type number | Description | Status | Quick access | |
|---|---|---|---|---|
|
|
NSF030120T2A0 | 1200 V, 30 mΩ, N-channel SiC MOSFET | Production | |
|
|
NSF040120T2A1 | 1200 V, 40 mΩ, N-channel SiC MOSFET | Production | |
|
|
NSF060120T2A0 | 1200 V, 60 mΩ, N-channel SiC MOSFET | Production |
Documentation (0)
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