Features and Benefits
CCPAK MOSFETs are designed to meet the high-power demands of next-generation industrial applications:
- High power rating (1.5 kW) in a compact 12 x 12mm package.
- Ultra-low RDS(on) for low I2R conduction losses.
- Best-in-class linear mode (SOA), in-rush & surge protection.
- Copper-clip technology gives low electrical & thermal resistance.
- High performance silicon.
- Outstanding board level reliability.
Applications
- High-power BLDC motor control
- High-power conversion (DC/DC & AC/DC)
- Battery management & protection
- Residential / commercial heat pump
- Renewable energy storage
- Hotswap for communication infrastructure
- Battery management systems
- Renewable energy
Top-side and bottom-side cooling
The CCPAK1212 series features a 12 mm × 12 mm footprint with bottom-side cooled CCPAK1212 and top-side cooled CCPAK1212i options, providing design flexibility, improved thermal management, and high performance in a compact size.
Featured products
Featured documents
Latest news and blogs
Latest videos
CCPAK1212: a new era for power semiconductor packaging
Parametric search
CCPAK1212 MOSFETs
Please wait loading data... Parametric search is unavailable.
Products
MOSFETs
| Type number | Description | Status | Quick access |
|---|---|---|---|
| PSMN1R4-100ASE | N-channel, 100 V, 1.36 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R2-80ASE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R1-100CSE | N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
| PSMN1R2-80CSE | N-channel, 80 V, 1.18 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Qualification | |
| PSMN1R4-100CSE | N-channel, 100 V, 1.42 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
| PSMN1R0-100ASE | N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R0-80CSE | N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Production | |
| PSMNR90-80ASE | N-channel, 80 V, 0.9 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Production | |
| PSMN1R0-100ASF | NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R0-100CSF | NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMN1R4-100CSF | NextPower 100 V, 1.35 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMN1R3-100ASF | NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R1-80ASF | NextPower 80 V, 1.11 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMNR90-80CSF | NextPower 80 V, 0.9 mOhm, N-channel MOSFET in CCPAK1212i package | Production | |
| PSMNR90-80ASF | NextPower 80 V, 0.85 mOhm, N-channel MOSFET in CCPAK1212 package | Production | |
| PSMN1R1-80CSF | NextPower 80 V, 1.16 mOhm, N-channel MOSFET in CCPAK1212i package | Production |
Documentation
| File name | Title | Type | Date |
|---|---|---|---|
| AN11243.pdf | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
| AN11158.pdf | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
| AN11156.pdf | Using Power MOSFET Zth Curves | Application note | 2021-01-04 |
| AN11261.pdf | RC Thermal Models | Application note | 2021-03-18 |
| AN50005.pdf | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
| AN50014.pdf | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
| AN50006.pdf | Power MOSFETs in linear mode | Application note | 2022-04-12 |
| AN90001.pdf | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2024-10-28 |
| RS6121_CCPAK1212i_MOSFETs.png | - | Marcom graphics | 2024-11-15 |
If you have a support question, let us know. If you are in need of design support, let us know and fill in the answer form, well get back to you shortly.
Or contact us for further support.