Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PSMN9R0-30YL

N-channel 30 V 8 mΩ logic level MOSFET in LFPAK

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

This product has been discontinued

Features and benefits

  • High efficiency due to low switching and conduction losses
  • Suitable for logic level gate drive sources

Applications

  • Class-D amplifiers
  • DC-to-DC converters
  • Motor control
  • Server power supplies

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN9R0-30YL SOT669 LFPAK56; Power-SO8 End of life N 1 30 8 11.03 175 61 2.4 8.7 17.8 46 16 1.7 N 1006 227 2011-03-10

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PSMN9R0-30YL PSMN9R0-30YL,115
(934063067115)		 Obsolete 9R030 P** XXYY AZ Batch No. SOT669
LFPAK56; Power-SO8
(SOT669) 		SOT669 REFLOW_BG-BD-1
WAVE_BG-BD-1
SOT669_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PSMN9R0-30YL PSMN9R0-30YL,115 PSMN9R0-30YL rohs rhf
Quality and reliability disclaimer

Series

Documentation (22)

File name Title Type Date
PSMN9R0-30YL N-channel 30 V 8 mOhm logic level MOSFET in LFPAK Data sheet 2011-03-10
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113 LFPAK MOSFET thermal design guide - Part 2 Application note 2020-05-04
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11160 Designing RC Snubbers Application note 2024-10-21
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT669 3D model for products with SOT669 package Design support 2017-06-30
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
LFPAK56_POWER-SO8_SOT669_mk plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body Marcom graphics 2017-01-28
SOT669 plastic, single-ended surface-mounted package; 4 terminals Package information 2022-05-30
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PSMN9R0-30YL PSMN9R0-30YL SPICE model SPICE model 2010-03-16
PSMN9R0_30YL PSMN9R0_30YL SPICE model SPICE model 2012-06-08
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
PSMN9R0_30YL PSMN9R0-30YL Thermal model Thermal model 2009-01-12
WAVE_BG-BD-1 Wave soldering profile Wave soldering 2021-09-08

Support

If you are in need of design/technical support, let us know and fill in the answer form we'll get back to you shortly.

Models

File name Title Type Date
PSMN9R0-30YL PSMN9R0-30YL SPICE model SPICE model 2010-03-16
PSMN9R0_30YL PSMN9R0_30YL SPICE model SPICE model 2012-06-08
PSMN9R0_30YL PSMN9R0-30YL Thermal model Thermal model 2009-01-12
SOT669 3D model for products with SOT669 package Design support 2017-06-30

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet