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Click here for more information74LVC3G16GF
Triple buffer
The 74LVC3G16 provides three buffers.
The inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the 74LVC3G16 as a translator in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant input/output for interfacing with 5 V logic
High noise immunity
±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8B/JESD36 (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Specified from -40 °C to +85 °C and -40 °C to +125 °C
Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
---|---|---|---|---|---|---|---|
74LVC3G16GF | 74LVC3G16GFX (935307607115) |
Obsolete | no package information |
Environmental information
All type numbers in the table below are discontinued.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
---|---|---|---|---|
74LVC3G16GF | 74LVC3G16GFX | 74LVC3G16GF |
Series
Support
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Models
File name | Title | Type | Date |
---|---|---|---|
lvc3g16 | 74LVC3G16 IBIS model | IBIS model | 2015-11-09 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.