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Click here for more information74LVC2G38GF
Dual 2-input NAND gate; open drain
The 74LVC2G38 is a dual 2-input NAND gate with open-drain outputs. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.
This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.
Alternatives
Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
Overvoltage tolerant inputs to 5.5 V
High noise immunity
CMOS low power dissipation
IOFF circuitry provides partial Power-down mode operation
±24 mA output drive (VCC = 3.0 V)
Open-drain outputs
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
JESD36 (4.5 V to 5.5 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
PCB Symbol, Footprint and 3D Model
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Package
All type numbers in the table below are discontinued.
Type number | Orderable part number, (Ordering code (12NC)) | Status | Marking | Package | Package information | Reflow-/Wave soldering | Packing |
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74LVC2G38GF | 74LVC2G38GF,115 (935291508115) |
Obsolete | no package information |
Environmental information
All type numbers in the table below are discontinued.
Type number | Orderable part number | Chemical content | RoHS | RHF-indicator |
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74LVC2G38GF | 74LVC2G38GF,115 | 74LVC2G38GF |
Series
Support
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Models
File name | Title | Type | Date |
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lvc2g38 | 74LVC2G38 IBIS model | IBIS model | 2014-10-20 |
PCB Symbol, Footprint and 3D Model
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.