Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

High ID for motor overload conditions

Highest current capability up to 500A

Many high power motor drive applications require extremely high (DC) current rated MOSFETs in order to provide maximum power and torque during demanding situations, such as standing start, steep incline or overcoming obstacles in the path of vehicles. There is also a requirement to survive expected overload conditions such as locked rotor or blocked pump where the MOSFET must be able to withstand the high current until safety and shut down features are implemented. During this high current switch off there will be parasytic effects pushing the MOSFET into Linear mode or avalanche, thereby it is imperative that the MOSFETs chosen have strong SOA and EAS capability.

High ID ASFETs for motor overload conditions feature:

  • 500 A in LFPAK88 and 380 A in a LFPAK56, enabling maximum torque from the motor and reliably managing high load and stall current conditions
  • Industry leading low Rth(j-mb) of LFPAK ensures MOSFET junction temperature can be kept under control even in the most compact of designs 
  • As with all motor applications, there is a level of system vibration that cannot be dampened. LFPAK brings a unique level of board level reliability and ruggedness.  

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High ID for motor overload conditions
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Products

Type number Description Status Quick access
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
Visit our documentation center for all documentation

Application note (2)
File name Title Type Date
AN90001.pdf Designing in MOSFETs for safe and reliable gate-drive operation Application note 2024-10-28
AN90016.pdf Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03

Leaflet (2)
File name Title Type Date
nexperia_document_leaflet_LFPAK88_2022_CHN.pdf LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022.pdf LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Selection guide (1)
File name Title Type Date
Nexperia_Selection_guide_2023.pdf Nexperia Selection Guide 2023 Selection guide 2023-05-10

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