Bipolar transistors

Diodes

ESD protection, TVS, filtering and signal conditioning

MOSFETs

SiC MOSFETs

GaN FETs

IGBTs

Analog & Logic ICs

Automotive qualified products (AEC-Q100/Q101)

PMFPB8032XP

20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination

Small-signal P-channel enhancement mode Field-Effect Transistor (FET) using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA) Schottky diode combined in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

This product has been discontinued

Features and benefits

  • 1.8 V RDSon rated for low-voltage gate drive
  • Small and leadless ultra thin SMD plastic package: 2 × 2 × 0.65 mm
  • Exposed drain pad for excellent thermal conduction
  • Integrated ultra low VF MEGA Schottky diode

Applications

  • Charging switch for portable devices
  • DC-to-DC converters
  • Power management in battery-driven portables
  • Hard disk and computing power management

Parametrics

Type number Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMFPB8032XP SOT1118 DFN2020-6 End of life P 2 -20 12 102 125 150 -3.7 0.96 5.7 0.485 -0.6 N 550 63 2012-12-21

Package

All type numbers in the table below are discontinued.

Type number Orderable part number, (Ordering code (12NC)) Status Marking Package Package information Reflow-/Wave soldering Packing
PMFPB8032XP PMFPB8032XP,115
(934066583115)		 Withdrawn / End-of-life 1X SOT1118
DFN2020-6
(SOT1118) 		SOT1118 REFLOW_BG-BD-1
SOT1118_115

Environmental information

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS RHF-indicator
PMFPB8032XP PMFPB8032XP,115 PMFPB8032XP rohs rhf rhf
Quality and reliability disclaimer

Documentation (17)

File name Title Type Date
PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1118 plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09

Support

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Models

File name Title Type Date
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

Interactive datasheet